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Gen-4 Super-Junction 600-V DTMOS IV MOSFET Series | Toshiba

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600V Super Junction MOSFET DTMOS IV High Speed | Toshiba

Toshiba has developed the Gen-4 super-junction 600-V DTMOS IV MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOS IVprovides a 30% reduction in Ron.

RDS(ON)

max (Ω)
DPAK IPAK I2PAK D2PAK DFN8x8 TO-220 TO-220SIS TO-3P(N) TO-247 TO-3P(L)
0.9 TK5P60W TK5Q60W         TK5A60W      
0.75 - 0.82 TK6P60W TK6Q60W         TK6A60W      
0.6 TK7P60W TK7Q60W         TK7A60W      
0.5 TK8P60W TK8Q60W         TK8A60W      
0.38 - 0.43 TK10P60W TK10Q60W     TK10V60W TK10E60W TK10A60W      
0.3 - 0.34 TK12P60W TK12Q60W     TK12V60W TK12E60W TK12A60W TK12J60W    
0.19     TK16C60W TK16G60W TK16V60W TK16E60W TK16A60W TK16J60W TK16N60W  
0.155 - 0.17     TK20C60W TK20G60W TK20V60W TK20E60W TK20A60W TK20J60W TK20N60W  
0.088 - 0.098         TK31V60W TK31E60W TK31A60W TK31J60W TK31N60W  
0.065             TK39A60W TK39J60W TK39N60W  
0.04               TK62J60W TK62N60W  
0.018                   TK100L60W

Features & Benefits:

  • 30% reduction in Ron・A, a MOSFET figure of merit, compared to the predecessor (DTMOSⅢ)
  • Lower increase in on-resistance at high temperatures due to the use of a single epitaxial process
  • 12% reduction in switching loss, Eoss, compared to the predecessor (DTMOSⅢ) owing to a reduction in Coss
  • Available with a wide range of on-resistance, RDS(ON): 0.9 Ω – 0.018 Ω max
  • Various packaging options

Applications:

  • Communication equipment
  • Servers
  • Desktop PCs
  • Adapters
  • LED Lighting
  • UPS
  • LCD TVs
  • Welders
  • Printers
  • Solar Inverters