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Ultra High Precision Foil Wraparound Surface Mount Chip | Vishay Precision Group

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Ultra High Precision Foil Wraparound Surface Mount Chip | VPGThe FRSH series is based on VFR's next-generation Z1-Foil technology, which provides an order of magnitude reduction in the Bulk Metal Foil element's sensitivity to temperature compared with the classical Foil—both external and internal—while providing long-term stability in high-temperature environments. FRSH devices offer TCR of ±1 ppm/°C from −55°C to +125°C and ±2.5 ppm/°C from −55°C to +200°C, +25°C ref. The resistors feature exceptional load-life stability to ±0.05% at +200°C for 2,000 hours at working power, long-term stability to ±0.05% at +225°C for 2,000 hours, and tight tolerances to ±0.02%. The devices' full wraparound terminations ensure safe handling during the manufacturing process and provide stability during multiple thermal cycling. The devices are also capable of withstanding electrostatic discharges at least to 25 kV without degradation.

Offered in six chip sizes from 0603 to 2512, the FRSH series features a wide resistance range from 10 Ω to 125 kΩ, with any resistance value within this range available at any tolerance with no additional cost or lead-time effect. The resistors feature a rise time of 1.0 ns, with effectively no ringing, a thermal stabilization time of <1 s (nominal value achieved within 10 ppm of steady state value), current noise of 0.01 µVrms per volt of applied voltage (<−40 dB), and a voltage coefficient of <0.1 ppm/V. The ROHS-compliant devices offer a non-inductive (<0.08 μH), non-capacitive design and are available in matched sets upon request.

Features & Benefits:

  • Extended pads for high power/high temperature applications up to +225 °C
  • Load life stability of 0.05%
  • TCR to ±1ppm/°C from −55°C to +125°C
  • TCR ±2.5 ppm/°C from −55°C to +200°C, +25°C ref
  • Offered in six chip sizes from 0603 to 2512
  • Wide resistance range from 10 Ω to 125 kΩ
  • Rise time of 1.0 ns
  • Thermal stabilization time of <1 s
  • Current noise of 0.01 µVrms per volt of applied voltage (<−40 dB)
  • Voltage coefficient of <0.1 ppm/V
  • Non-inductive (<0.08 μH), non-capacitive design

Additional Information: