Vishay's new 40 V and 60 V n-channel TrenchFET® power MOSFETs are the industry’s lowest on-resistance and on-resistance times gate charge figures of merit for devices with these voltage ratings in the SO-8 or PowerPAK® SO-8 packages.
Both devices are built on a new silicon technology utilizing an optimized trench density and a unique gate structure. For designers, their lower on-resistance translates into lower conduction losses for reduced power consumption, especially at heavy loads. Their low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and stand-by mode. The devices’ high efficiency allows designers to increase the power density of their systems and/or provide lower power loss, greener solutions.
The SiR662DP and SiR640DP are intended for secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Typical end products will include telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies (UPS), and consumer applications.
The MOSFETs’ 4.5 V rating will give many designers the opportunity to use a 5 V power rail in their systems, already present for powering digital logic, without having to create and find space for a 10 V power rail. The 4.5 V rating will also significantly lower gate drive losses while allowing lower-voltage/lower-cost 5 V PWM ICs to be utilized. Both devices are 100 % Rg and UIS tested. They are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.