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E-Series MOSFETs | Vishay

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E-Series MOSFETs | VishayFeaturing new Super Junction Technology, Vishay’s new E Series of 600 V and 650 V n-channel power MOSFETs achieve new levels of efficiency and power density, while offering lower input capacitance and increased switching speeds over a wide range of current ratings. The MOSFETs provide ultra-low maximum on-resistance from 64 mΩ to 190 mΩ at 10 V, which is 30 % lower than previous-generation S Series devices for the same die size. This low on-resistance translates into extremely low conduction losses to save energy in high-power, high-performance switch mode applications. Available in the TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages, the E Series offers ultra-low gate charge and low gate charge times on-resistance FOM for power conversion applications.

Features & Benefits:

  • Ultra-low maximum on resistance from 64 mΩ to 190 mΩ at 10 V
  • Low gate charge and gate charge times on-resistance FOM
  • Wide range of current ratings from 22 A to 47 A
  • E Series Super Junction Technology
  • Offered in TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages
  • Withstand high energy pulse in the avalanche and commutation mode
  • Compliant to RoHS Directive 2002/95/EC
  • Avalanche (UIS) rated for reliable operation

Applications:

  • Switch mode applications
    • Power factor correction
    • Server and telecom power systems
    • Welding
    • Plasma cutting
    • Battery chargers
    • High-intensity discharge (HID) lighting
    • Fluorescent ballast lighting
    • Semiconductor capital equipment
    • Solar inverters
    • Induction heating.

Additional Information: