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Discretes

TTI is known for providing world class delivery support on low ASP (average selling price) parts, such as resistors and capacitors. We are committed to providing nothing short of exceptional support for discrete semiconductors. TTI’s specialization in diodes, transistors, rectifiers, and the like allows us to apply our existing expertise in low ASP parts to a product category that gets little attention from semiconductor distributors. Additionally, TTI knowledge encompasses other discrete components like MOSFETs, optocouplers, and thyristors.

TTI has a team of specialists with more product experience and knowledge in passives, connectors, electromechanical, and discrete components than any other distributor. TTI believes that it can help customers streamline discrete component procurement.

With discrete semiconductors we offer the same system and process as we do with passive and connector components. Put this expertise to work for you and enjoy our long-established on time delivery and service performance!

Deep Discrete Inventory

Other highlights of our discrete products include: diode, diode semiconductor, diode transistor, ESD, ESD suppressor, FET transistor, IGBT, MOSFET, power transistor, rectifier, schottky diode, semiconductor diode, semiconductor transistor, transient voltage, suppression diode, transistor, transistor bipolar, transistor FET, TVS, TVS diode, Vishay, Mosfet, Vishay Semiconductor, and zener diode.

Featured Discrete Semiconductor Products

MOSFETS | Toshiba

MOSFETS | Toshiba
Toshiba offers a wide variety of MOSFETs that help reduce product size and power consumption, such as MOSFETs in ultra-small, thin packages and those with ultra-low ON-resistance that can be driven at a low voltage. ( more info )

Discrete TVS Diode (Series SP4020 / SP4021) | Littelfuse

Discrete TVS Diode (Series SP4020 / SP4021) | Littelfuse
The SP4020 Series TVS Diode Arrays can safely provide up to 30A protection against lightning induced surges and up to 750W of power handling capability. ( more info )

Toshiba Small Signal Discrete Semiconductor

Toshiba Small Signal Discrete Semiconductor
Toshiba small signal discrete semiconductors come in a variety of packages. The products come in two small standard packages: SOT-345 and SOT-25. ( more info )

HELI High Brightness Energy Efficient Low-Cost Illumination LEDs | Kingbright

HELI High Brightness Energy Efficient Low-Cost Illumination LEDs | Kingbright
Kingbright proudly presents our newest "HELI" series – High-brightness, Energy-efficient, Low-cost Illumination Selection LEDs ( more info )

Related Articles
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    06.26.2014 // Posted by: Didier Coulon

    After having recovered in 2010 from the 2009 recession, the global industrial sector market has not been immediately affected by the financial crisis in 2011. But the global weakness of the economy in the developed countries and a slower growth in the developing ones stopped this favourable orientation, and the world industrial electronic equipment production growth rate decreased from 8.4% in 2011 to 2.6% in 2012 and 3.5% in 2013. Keep reading...

  • TTI Sees Robust Growth for Discretes

    05.23.2014 // Posted by: Jim Carbone

    The global market for discrete semiconductors will grow 3-4 percent per year through 2016 although there will be price erosion, according to chipmakers.

    Ron Clifford, senior director regional marketing Americas for Vishay Semiconductors, noted that power transistors are the largest part of the discretes market and that World Semiconductor Trade Statistics (WSTS) forecasts that power transistor sales growth will be slightly stronger than the overall discretes market.

    However, he felt growth may not be as strong for power transistors as WSTS forecasts because of above average price erosion, especially for metal oxide semiconductor field emitting transistors (MOSFETs), which are the largest product segment within power transistors. Keep reading...

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Product Overview

Discrete semiconductor products are available at TTI Inc. from industry leading manufacturers. TTI is an authorized distributor for many sensor manufacturers including: Aeroflex Metelics, Semelab / TT electronics, Toshiba, Kingbright and Littelfuse.

Discrete Components

Bipolar Transistor

Bipolar Transistor (BJT) Bipolar junction transistors are a type of transistor used in applications for amplification and switching signals. They are named Bipolar as their operations involves both electrons and holes (opposite of electrons). Similar to the MOSFET, the bipolar transistor is used in applications where signal switching or amplification is required.

Diode

Diode A diode is a component that allows an electric current to flow in one direction, but blocks it in the opposite direction, like an electronic version of a check valve. Circuits that require current flow in only one direction typically include one or more diodes in the circuit design.

IGBT

IGBT The Insulated-Gate Bipolar Transistor or IGBT is a three terminal power semiconductor device that is noted for high efficiency and fast switching. IGBT’s are used to switch power in many electrical appliances: variable speed refrigerators, air conditioners, stereo systems with digital amplifiers. IGBT’s are a fairly recent invention beginning in the 1980’s and 1990’s. They rival the speed of MOSFET's with the ability to handle very large amounts of current and voltage. IGBT’s are often selected in lieu of MOSFETs in applications over 600 volts. IGBT’s are a major component in electric and hybrid automobiles.

MOSFET

MOSFET A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is an electronic device used to amplify or switch electronic signals. MOSFET's are the most common field effect transistor (FET) in both digital and analog circuits. MOSFET's are an enhancement on bipolar technology and are the most popular semiconductor-type transistor. A MOSFET provides both an output current and voltage gain into an external load that exceeds the input current and voltage. In basic terms MOSFET's amplify their input signals.

N-Channel & P-Channel MOSFETs

P-Channel MOSFETs N-Channel & P-Channel MOSFETs are specific types of MOSFETs. Silicon is “doped” by adding a slight impurity to the silicon to result in an extra electron or a reduction of one electron. N-channel devices have an extra electron in their base structure while the P-channel device are missing electrons.

Rectifier

Rectifier A rectifier is a diode operating above 0.5amps and converts alternating current (AC) to direct current (DC) in a process known as rectification. Devices that convert the opposite (DC to AC) are know as inverters. Rectifiers are most commonly found in power supplies. Rectifiers can take standard AC electricity from power outlets and make the power usable in DC circuits. They are also used for signal conditioning. Rectifiers are also known as power diodes and are the largest class of products in the diode family. Devices with a current under 0.5amps are considered small signal diodes.

Transistor

Transistor A transistor is a semiconductor device commonly used as an amplifier or an electrically controlled switch. The transistor is used in a wide variety of digital and analog functions, including amplification, switching, voltage regulation, signal modulation, and oscillators because of its fast response and accuracy. Modern transistors are divided into two main categories: bipolar transistors and field effect transistors (FETs).
 

Things to Consider

Key Paramenters - Bipolar Transistors
  • Collector emitter voltage: amount of voltage that can be applied between the collector
  • Collector current: maximum current the collector can accommodate before failure
  • Current gain: current gain of the device
  • Collector-emitter saturation voltage: indication of voltage strength
  • Maximum power dissipation: indicates how much power the device can withstand before possible failure
Key Paramenters - IGBTs
  • Voltage breakdown: amount of voltage that can be applied between the collector and the emitter
  • Peak current: maximum current the collector can accommodate before risking damage to the device
  • Collector-emitter saturation voltage: voltage between the collector and emitter
Key Paramenters - MOSFETs
  • Source drain resistance: measurement of resistance when a device is on between the drain and the source load
  • Voltage drain source: amount of voltage that can be applied between the drain and the source before the junction breaks down
  • Drain current: maximum current the drain can accommodate before risking damage to the device
  • Gate charge: amount of charge required to switch the gate from on to off, and vice versa
Key Paramenters - Rectifiers
  • Peak repetitive reverse voltage: amount of reverse voltage that can be applied before damaging the device
  • Reverse recovery time: amount of time required for the current to reach a specified level after switching from forward to reverse bias
  • Maximum average current: highest repetitive current value the device can withstand before failure
  • Non-repetitive maximum allowable peak current: highest non-repetitive current value the device can withstand before failure