Browse Our Online Inventory: Check Availability, View Pricing, Order Parts
TTI is known for providing world class delivery support on low ASP (average selling price) parts, such as resistors and capacitors. We are committed to providing nothing short of exceptional support for discrete semiconductors. TTI’s specialization in diodes, transistors, rectifiers, and the like allows us to apply our existing expertise in low ASP parts to a product category that gets little attention from semiconductor distributors. Additionally, TTI knowledge encompasses other discrete components like MOSFETs, optocouplers, and thyristors.
TTI has a team of specialists with more product experience and knowledge in passives, connectors, electromechanical, and discrete components than any other distributor. TTI believes that it can help customers streamline discrete component procurement.
With discrete semiconductors we offer the same system and process as we do with passive and connector components. Put this expertise to work for you and enjoy our long-established on time delivery and service performance!
Deep Discrete Inventory
Other highlights of our discrete products include: diode, diode semiconductor, diode transistor, ESD, ESD suppressor, FET transistor, IGBT, MOSFET, power transistor, rectifier, schottky diode, semiconductor diode, semiconductor transistor, transient voltage, suppression diode, transistor, transistor bipolar, transistor FET, TVS, TVS diode, Vishay, Mosfet, Vishay Semiconductor, and zener diode.
Featured Discrete Semiconductor Products
Toshiba small signal discrete semiconductors come in a variety of packages. The products come in two small standard packages: SOT-345 and SOT-25.
Toshiba’s DTMOS IV Super Junction MOSFETs deliver a combination of high conduction and switching efficiency, small die area and high breakdown voltage that conventional devices cannot achieve.
Vishay recently released their new 600V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay Siliconix SiHx28N60EF and SiHx33N60EF increase reliability and save energy in industrial, telecom, computing, and renewable energy applications.
The ongoing demands of electronic equipment designs continually require high density and fast speed in small packages. Bourns® FLAT™ GDT technology provides the key features and benefits of conventional GDT technology in a volume and space saving design.
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So far, the 21st century has been a bit rocky for the electronic components industry. The turn of the century began not with the popping of champagne corks but the popping of the tech bubble. The first couple of years were spent working through the inventory hangover from the close of the preceding century and with deals to be had on excess components, the purchase price variance (PPV) became an entrenched metric for the customer base. Now, fifteen years in, the electronic components industry has developed the habit of tracking the rise and fall of the GDPs of the overall economies with in which it lives. Keep reading...
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Global Purchasing Index remains in positive territory, but buyers surveyed report weaker confidence, as the index falls 12% compared to March.
Electronics Buyers Optimistic, But Report Slowdown in April.
Buyers of electronic components remained optimistic in April, though their business confidence slowed compared to the first quarter of the year, according to the Global Purchasing Index report for April. Keep reading...
// Posted by:
After slipping below the 100-point mark indicating business optimism in December, the Global Purchasing Index surged 19% to a reading of 118 in January as buyers of electronic components reported better business conditions at the start of 2015.
Though GPI panel members reported a 3% drop in new orders from customers during the month, they said they expect orders to pick up later in the first quarter and in the second quarter of the year. They also reported an increase in their purchasing activity along with an increase in their electronic component inventories. Keep reading...
Discrete semiconductor products are available at TTI Inc. from industry leading manufacturers. TTI is an authorized distributor for many sensor manufacturers including: Aeroflex Metelics, Semelab / TT electronics, Toshiba, Kingbright and Littelfuse.
(BJT) Bipolar junction transistors
are a type of transistor used in applications for amplification and switching signals. They are named Bipolar as their operations involves both electrons and holes (opposite of electrons). Similar to the MOSFET, the bipolar transistor is used in applications where signal switching or amplification is required.
is a component that allows an electric current to flow in one direction, but blocks it in the opposite direction, like an electronic version of a check valve.
Circuits that require current flow in only one direction typically include one or more diodes in the circuit design.
ransistor or IGBT
is a three terminal power semiconductor device that is noted for high efficiency and fast switching. IGBT’s are used to switch power in many electrical appliances: variable speed refrigerators, air conditioners, stereo systems with digital amplifiers. IGBT’s are a fairly recent invention beginning in the 1980’s and 1990’s. They rival the speed of MOSFET's with the ability to handle very large amounts of current and voltage. IGBT’s are often selected in lieu of MOSFETs in applications over 600 volts. IGBT’s are a major component in electric and hybrid automobiles.
ransistor) is an electronic device used to amplify or switch electronic signals. MOSFET's are the most common field effect transistor (FET) in both digital and analog circuits. MOSFET's are an enhancement on bipolar technology and are the most popular semiconductor-type transistor. A MOSFET provides both an output current and voltage gain into an external load that exceeds the input current and voltage. In basic terms MOSFET's amplify their input signals.
N-Channel & P-Channel MOSFETs
N-Channel & P-Channel MOSFETs
are specific types of MOSFETs. Silicon is “doped” by adding a slight impurity to the silicon to result in an extra electron or a reduction of one electron. N-channel devices have an extra electron in their base structure while the P-channel device are missing electrons.
is a diode operating above 0.5amps and converts alternating current (AC) to direct current (DC) in a process known as rectification
. Devices that convert the opposite (DC to AC) are know as inverters. Rectifiers are most commonly found in power supplies. Rectifiers can take standard AC electricity from power outlets and make the power usable in DC circuits. They are also used for signal conditioning. Rectifiers are also known as power diodes and are the largest class of products in the diode family. Devices with a current under 0.5amps are considered small signal diodes.
is a semiconductor device commonly used as an amplifier or an electrically controlled switch. The transistor is used in a wide variety of digital and analog functions, including amplification, switching, voltage regulation, signal modulation, and oscillators because of its fast response and accuracy. Modern transistors are divided into two main categories: bipolar transistors and field effect transistors (FETs).
Things to Consider
Key Paramenters - Bipolar Transistors
Key Paramenters - IGBTs
- Collector emitter voltage: amount of voltage that can be applied between the collector
- Collector current: maximum current the collector can accommodate before failure
- Current gain: current gain of the device
- Collector-emitter saturation voltage: indication of voltage strength
- Maximum power dissipation: indicates how much power the device can withstand before possible failure
Key Paramenters - MOSFETs
- Voltage breakdown: amount of voltage that can be applied between the collector and the emitter
- Peak current: maximum current the collector can accommodate before risking damage to the device
- Collector-emitter saturation voltage: voltage between the collector and emitter
Key Paramenters - Rectifiers
- Source drain resistance: measurement of resistance when a device is on between the drain and the source load
- Voltage drain source: amount of voltage that can be applied between the drain and the source before the junction breaks down
- Drain current: maximum current the drain can accommodate before risking damage to the device
- Gate charge: amount of charge required to switch the gate from on to off, and vice versa
- Peak repetitive reverse voltage: amount of reverse voltage that can be applied before damaging the device
- Reverse recovery time: amount of time required for the current to reach a specified level after switching from forward to reverse bias
- Maximum average current: highest repetitive current value the device can withstand before failure
- Non-repetitive maximum allowable peak current: highest non-repetitive current value the device can withstand before failure