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MOSFET 1200V20A160mOhm Silicon Carbide SiC

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Standard: 0 In Stock

Product Details

Manufacturer: ROHM Semiconductor
TTI Part Number: Not Assigned
Mfr Part Number: SCT2160KEC
Product Category: MOSFET

ECAD Model

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0 In Stock

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Tech Specifications

Description	Product Attribute	Search Similar
Manufacturer	ROHM Semiconductor
Product Category	MOSFET
Technology	SiC
Mounting Style	Through Hole
Package / Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	22 A
Rds On - Drain-Source Resistance	160 mOhms
Vgs - Gate-Source Voltage	- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage	1.6 V
Qg - Gate Charge	62 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	165 W
Channel Mode	Enhancement
Packaging	Tube
Configuration	Single
Fall Time	27 ns
Forward Transconductance - Min	2.4 S
Product Type	MOSFET
Rise Time	25 ns
Series	SCT2x
Subcategory	MOSFETs
Transistor Type	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time	67 ns
Typical Turn-On Delay Time	23 ns
Part # Aliases	SCT2160KE