SI7114DN-T1-E3

SI7114DN-T1-E3 Vishay Semiconductors
Reference Only
MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V
Availability

Standard: 0 In Stock

Product Details

RoHS/Lead

RoHS Per Exemption
Lead Free

Available Packaging

Standard

ECAD Model

Alternate Part Number

SI7114DN-T1-GE3
0 In Stock
Additional Stock Lead Time: 16 Wks

Quantity
Price
Ext. Price

$0.94
$2,820.00
$0.92
$5,520.00
$0.90
$8,100.00
Please adjust quantity to Min / Mult value
Min: 3,000 / Mult: 3,000

Tech Specifications

DescriptionProduct AttributeSearch Similar
ManufacturerVishay
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current18.3 A
Rds On - Drain-Source Resistance7.5 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge12.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation3.8 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time10 ns
Forward Transconductance - Min77 S
Product TypeMOSFET
Rise Time10 ns
SeriesSI7
SubcategoryMOSFETs
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time10 ns
Part # AliasesSI7114DN-T1

Export and Environmental Classification

  • ECCNEAR99
  • HTS8541290095
  • TARIC8541290000
  • RoHS CompliantRoHS Per Exemption
    RoHS Per Exemption
  • RoHS Exemption NumberN/A
  • Lead(PB) in TerminalsNo
    Lead Free
  • REACH SVHCYes
  • REACH Substance NameLead (7439-92-1)

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