Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | ||||||||||||||||
TTI: SSM3J334R,LF Mfr: SSM3J334R,LF Toshiba Availability: 18,000 MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 18,000 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 136 mOhms | - 20 V, + 20 V | 800 mV | 5.9 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||
18,000 | Si | P-Channel | 1 Channel | Reel | |||||||||||||||||
0 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, + 20 V | 800 mV | 5.9 nC | + 150 C | 1 W | Enhancement |