Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0 | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | ||||||||||||||||
TTI: SSM3K56CT,L3F Mfr: SSM3K56CT,L3F Toshiba Availability: 30,000 MOSFET Small Low ON Resistane MOSFETs | 30,000 | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 800 mA | 186 mOhms | - 8 V, + 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | |||
30,000 | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | - 8 V, + 8 V | 400 mV | + 150 C | 500 mW | Enhancement | DTMOSIV | Reel |