SiC Power Module

Rohm Semiconductor
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Switching loss of Full-SiC power module integrating SiC MOSFETs and SBDs is significantly lower than conventional IGBT modules. These new modules make high frequency operation above 100kHz possible (unlike conventional products).

Features

  • Low surge, low switching loss
  • High-speed switching
  • Reduced temperature dependence

Applications

  • Motor drives
  • Inverters, Converters
  • Photovoltaics
  • Induction heating equipment

Resources