SiC Schottky Barrier Diodes

Rohm Semiconductor
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The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.


  • Short recovery time
  • Reduced temperature dependence
  • High speed switching