Multi-Chip Discrete Devices

Toshiba
Part Number Information
Part #: Price/Availability:
HN2E04F Inquire
SSM5G02TU Inquire
SSM5G04TU Buy Now
SSM5G06FE Inquire
SSM5G09TU Inquire
SSM5G10TU Buy Now
SSM5G11TU Inquire
SSM5H01TU Inquire
SSM5H05TU Inquire
SSM5H06FE Inquire
SSM5H07TU Inquire
SSM5H08TU Inquire
SSM5H10TU Inquire
SSM5H11TU Inquire
SSM5H12TU Buy Now
SSM5H16TU Inquire
SSM5H90ATU Inquire
SSM6G18NU Inquire
SSM6H19NU Buy Now
TPCP8R01 Inquire

IGBT is short for Insulated Gate Bipolar Transistor. It is a power transistor with a MOS structure for an input part and a bipolar one for an output part.

Info

P/N& Datasheet

Configuration

(Q1) VCEO (Max) (V)

(Q1) VDS (Max) (V)

(Q1) VR (Max) (V)

(Q1) IC (Max) (A)

(Q1) ID (Max) (A)

(Q2) VCEO (Max) (V)

(Q2) VDS (Max) (V)

(Q2) VR (Max) (V)

(Q2) IC (Max) (A)

(Q2) ID (Max) (A)

Number of Pins

Surface Mount Pkg

Pkg. Name

HN2E04F

PNP + Small-signal SW diode

-120

 

 

-0.1

 

 

 

80

 

 

6

Y

SM6

SSM5G02TU

P-ch MOS + SBD

 

-12

 

 

-1

 

 

12

 

 

5

Y

UFV

SSM5G04TU

P-ch MOS + SBD

 

-12

 

 

-1

 

 

12

 

 

5

Y

UFV

SSM5G06FE

P-ch MOS + SBD

 

-20

 

 

-0.1

 

 

12

 

 

5

Y

ESV

SSM5G09TU

P-ch MOS + SBD

 

-12

 

 

-1.5

 

 

12

 

 

5

Y

UFV

SSM5G10TU

P-ch MOS + SBD

 

-20

 

 

-1.5

 

 

 

 

 

5

Y

UFV

SSM5G11TU

P-ch MOS + SBD

 

-30

 

 

-1.3

 

 

 

 

 

5

Y

UFV

SSM5H01TU

N-ch MOS + SBD

 

30

 

 

1.4

 

 

20

 

 

5

Y

UFV

SSM5H05TU

N-ch MOS + SBD

 

20

 

 

1.5

 

 

12

 

 

5

Y

UFV

SSM5H06FE

N-ch MOS + SBD

 

20

 

 

0.1

 

 

12

 

 

5

Y

ESV

SSM5H07TU

N-ch MOS + SBD

 

20

 

 

1.2

 

 

12

 

 

5

Y

UFV

SSM5H08TU

N-ch MOS + SBD

 

20

 

 

1.5

 

 

20

 

 

5

Y

UFV

SSM5H10TU

N-ch MOS + SBD

 

20

 

 

1.6

 

 

 

 

 

5

Y

UFV

SSM5H11TU

N-ch MOS + SBD

 

30

 

 

1.9

 

 

 

 

 

5

Y

UFV

SSM5H12TU

N-ch MOS + SBD

 

30

 

 

1.9

 

 

 

 

 

5

Y

UFV

SSM5H16TU

N-ch MOS + SBD

 

30

 

 

1.9

 

 

 

 

 

5

Y

UFV

SSM5H90ATU
NEW

N-ch MOS + SW-DI

 

20

 

 

2.4

 

 

80

 

 

5

Y

UFV

SSM6G18NU

P-ch MOS + SBD

 

-20

 

 

-2

 

 

 

 

 

6

Y

UDFN6

SSM6H19NU
NEW

N-ch MOS + SBD

 

40

 

 

2

 

 

40

 

 

6

Y

UDFN6

TPCP8R01

N-ch MOS + ZNR

 

60

 

 

2

 

 

 

 

 

8

Y

PS-8