Radio-Frequency Diodes

Toshiba
RF-diodes

These diodes have the capacities variable depending on the value of the reverse bias voltage applied between the anode and the cathode. They are also called VCDs (Variable Capacitance Diodes) or VariCaps. They are used in radio-frequency matching circuits for electronic tuning.

Part Number & Datasheet

Application Scope

Number of Circuits

CT (lower_side) (Min)
(pF)

CT (upper_side) (Min)
(pF)

rS (Typ.)
(ohm)

CT(1)/CT(2)
(Typ.)

Number of Pins

Surface Mount Package

Package Name
(Toshiba)

1SV228

FM car radios / Portable radios

2

11.7

28.5

0.3

-

3

Y

S-Mini

1SV229

VHF/UHF VCO

1

5.5

14

0.2

2.5

2

Y

USC

1SV239

L Band VCO

1

1.5

3.8

0.44

2.4

2

Y

USC

1SV262

CATV tuners

1

2.6

33

0.6

12.5

2

Y

USC

1SV270

VHF/UHF VCO

1

7.3

15

0.28

2

2

Y

USC

1SV277

L Band VCO

1

1.85

4

0.42

2.3

2

Y

USC

1SV279

VHF/UHF VCO

1

5.5

14

0.2

2.5

2

Y

ESC

1SV280

L Band VCO

1

1.5

3.8

0.44

2.4

2

Y

ESC

1SV281

VHF/UHF VCO

1

7.3

15

0.28

2

2

Y

ESC

1SV282

CATV tuners

1

2.6

33

0.6

12

2

Y

ESC

1SV285

L Band VCO

1

1.85

4

0.42

2.3

2

Y

ESC

1SV304

VHF/UHF VCO

1

5.3

17.3

0.27

3

2

Y

USC

1SV305

VHF/UHF VCO

1

5.3

17.3

0.27

3

2

Y

ESC

1SV310

VHF/UHF VCO

1

4.45

9.7

0.28

2.1

2

Y

USC

1SV311

VHF/UHF VCO

1

4.45

9.7

0.28

2.1

2

Y

ESC

1SV314

VHF/UHF VCO

1

2.75

7.3

0.35

2.5

2

Y

ESC

1SV322

VCXO

1

6

26.5

0.4

4.3

2

Y

USC

1SV323

VCXO

1

6

26.5

0.4

4.3

2

Y

ESC

1SV324

VCXO

1

9.2

44

0.4

4.3

2

Y

USC

1SV325

VCXO

1

9.2

44

0.4

4.3

2

Y

ESC

JDV2S07FS

L Band VCO

1

1.85

4

0.42

2.3

2

Y

fSC

JDV2S09FS

VHF/UHF VCO

1

4.45

9.7

0.33

2.1

2

Y

fSC

JDV2S36E

VHF/UHF VCO

1

2.75

7.3

0.35

2.55

2

Y

fSC

JDV2S41FS

VCXO

1

5.4

44

0.4

7.5

2

Y

ESC

JDV2S41FS

VHF/UHF VCO

1

5.5

14

0.2

2.5

2

Y

fSC

 

Radio-Frequency Switching Diodes

They are particularly optimum for switching UHF/VHF frequency band of TV tuners.


Part Number & Datasheet

Product Category

VR (Max)
(V)

VF (Max)
(V)

VF (Typ.)
(V)

CT (Typ.)
(pF)

rS (Typ.)
(ohm)

Number of Circuits

Internal Connection

Number of pins

Surface mount package

Package name
(Toshiba)

1SS268

Radio-frequency switching diode

30

0.85

-

0.8

0.6

2

Common cathode

3

Y

S-Mini

1SS269

Radio-frequency switching diode

30

0.85

-

0.8

0.6

2

Common anode

3

Y

S-Mini

1SS312

Radio-frequency switching diode

30

0.85

-

0.8

0.6

2

Common cathode

3

Y

USM

1SS313

Radio-frequency switching diode

30

0.85

-

0.8

0.6

2

Common anode

3

Y

USM

1SS314

Radio-frequency switching diode

30

0.85

-

0.7

0.5

1

Single

2

Y

USC

1SS364

Radio-frequency switching diode

30

0.85

-

0.85

0.6

2

Common cathode

3

Y

SSM

1SS364

Radio-frequency switching diode

30

0.85

-

0.7

0.6

1

Single

2

Y

ESC

1SV128

Radio-frequency switching diode

50

-

0.95

0.25

3

1

Single

3

Y

S-Mini

1SV172

Radio-frequency switching diode

50

-

0.95

0.25

3

2

Series

3

Y

S-Mini

1SV271

Radio-frequency switching diode

50

1

0.93

0.25

3

1

Single

2

Y

USC

1SV307

Radio-frequency switching diode

30

1

0.95

0.3

1.1

1

Single

2

Y

USC

1SV308

Radio-frequency switching diode

30

1

0.95

0.3

1.1

1

Single

2

Y

ESC

JDP2S02ACT

Radio-frequency switching diode

30

0.94

0.9

0.3

1

1

Single

2

Y

CST2

JDP2S02AFS

Radio-frequency switching diode

30

0.94

0.9

0.3

1

1

Single

2

Y

fSC

JDP2S04E

Radio-frequency switching diode

50

1

0.95

0.25

3

1

Single

2

Y

ESC

JDP2S08SC

Radio-frequency switching diode

30

0.95

0.89

0.21

1

1

Single

2

Y

SC2

JDP2S12CR

Radio-frequency switching diode

180

1.0

0.8

1.0

0.4

1

Single

2

Y

S-FLAT

JDP3C02A

Radio-frequency switching diode

30

0.98

0.89

0.28

1

2

Common cathode

3

Y

USM

JDP3C04TU

Radio-frequency switching diode

50

1

0.92

0.30

3

2

Common cathode

3

Y

UFM

 

Radio-Frequency Schottky Barrier Diodes

Making use of rectifying property brought about by contact of a metal and a semiconductor, in place of P-N junction, these diodes are activated by a majority carrier. They are suitable for radio-frequency signal mixer circuits because the forward voltage is low and the reverse recovery time is short.


Part Number & Datasheet

Product Category

IF/IF(AV)/IO (Max) (A)

VR (Max) (V)

CT/Cj (Typ.) (pF)

Features

Number of Pins

Surface Mount Package

Package Name (Toshiba)

1SS154

High frequency Schottky barrier diode

0.03

6

0.8

 

3

Y

S-Mini

1SS271

High frequency Schottky barrier diode

0.03

6

0.8

 

3

Y

S-Mini

1SS295

High frequency Schottky barrier diode

0.03

4

0.6

 

3

Y

S-Mini

1SS315

High frequency Schottky barrier diode

0.03

 

0.6

 

2

Y

USC

JDH2S01FS

High frequency Schottky barrier diode

0.03

 

0.6

 

2

Y

fSC

JDH2S02FS

High frequency Schottky barrier diode

0.01

10

0.3

 

2

Y

fSC

JDH2S02SC

High frequency Schottky barrier diode

0.01

10

0.25

 

2

Y

SC2

JDH3D01FV

High frequency Schottky barrier diode

0.025

4

0.6

 

3

Y

VESM

JDH3D01S

High frequency Schottky barrier diode

0.025

4

0.6

Low VF

3

Y

SSM