SiC Schottky Barrier Diodes

Toshiba
sic-schottky-barrier-diodes

Fabricated using silicon carbide (SiC), a wide-bandgap semiconductor, SiC Schottky barrier diodes (SBDs) provide high breakdown voltage that has never been possible with silicon (Si) SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behavior, making them the ideal replacements for Si fast-recovery diodes (FRDs) to improve power supply efficiency.

Breakdown Voltage (V)

Current Rating (A)

TO-220-2L (2-Lead)

TO-220F-2L (2-Lead)

TO-247 (Center Tap)

TO-3P(N)

TO_220_3_MEI.jpg

TO247-3.jpg

thumb_TO-247_1.gif

to-3p_n_50.gif

650

6

TRS6E65C

 

TRS6A65C

 

 

 

8

TRS8E65C

 

TRS8A65C

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10

TRS10E65C

 

TRS10A65C

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12

TRS12E65C

 

TRS12A65C

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TRS12N65D

 

 

16

 

TRS16A65C

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TRS16N65D

 

 

20

 

 

TRS20N65D

 

 

24

 

 

TRS24N65D

 

 

1200

20

 

 

 

TRS20J120C

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Applications

  • Power factor correction circuits
  • Photovoltaic inverters
  • Uninterruptible power supplies