28V Devices for Frequencies to 1GHZ

TT Electronics
Part Number Information
Part #: Price/Availability:
D10 Buy Now

Semelab RF MOSFETs are manufactured using a unique silicon Vertical DMOS process with gold metalisation which gives high performance and maximum reliability at high power levels.


  • Ultra-high linearity, low Rds(on) and high efficiency
  • Very high gain and exceptionally rugged
  • Ultra wide band - 1MHz to 1GHz
  • Wide power range - 750mW to 400W
  • Exceptionally low feedback capacitance resulting in:
    • High gain via reduced Miller Effect (20dB VHF, 16dB UHF)
    • High stability
    • Easier design
  • Low Rds(on) for high efficiency (>50%)
  • High breakdown voltage (typically 85V for 28V parts) for exceptional ruggedness (up to 20:1 VSWR withstand)
  • Excellent thermal stability


  • Military/Aerospace
  • Industrial Down-Hole