Vishay PowerPAK ChipFET Power MOSFETs
The Vishay PowerPAK ChipFET package offers advanced thermal performance in a compact 3mm by 1.8mm footprint. PowerPAK ChipFET devices are space-saving alternatives to MOSFETs with a much larger SO-8 package. They deliver a higher power density by offering the same 3W maximum power dissipation with an 81% smaller footprint area and a 48% thinner height profile (0.8mm). This allows n-channel PowerPAK ChipFETs to replace SO-8 MOSFETs in certain point-of-load, fixed telecom synchronous rectification, and low-power computer DC to DC conversion applications.
Additionally, the p-channel plus Schottky diode version will be used in asynchronous DC to DC applications, such as those found in hard disk drives and game consoles, to replace devices in the SO-8 package. Compared to devices in the TSOP-6, PowerPAK ChipFET devices feature 75% lower thermal resistance values, a 33% smaller footprint area, a 25% thinner height profile (0.8mm), and a 9% reduction in on-resistance. They also enable longer times between battery charges in portable devices, replacing load, PA, charger, and battery MOSFET switches in the TSOP-6. With their low conduction losses and enhanced thermal efficiency, power MOSFETs in Vishay's PowerPAK ChipFET family are pin-compatible with products in the standard ChipFET package.
Features
- 3W maximum power dissipation for high thermal efficiency
- Advanced thermal performance in a compact 3mm by 1.8mm footprint
- Available in single, dual, co-packaged n- and p-channel, and MOSFET plus Schottky versions
- Breakdown voltage ratings from 20V to 30V for p-channel and 20V to 60V for n-channel
- Thermally enhanced PowerPAK ChipFET package
- Low on-resistance
- Small footprint area
- Thin 0.8mm profile
Applications
- Load switch, PA switch, and charger switch for portable devices
- N-Channel:
- Load switches in portable electronic systems and notebook PCs
- Point-of-load, synchronous rectification, and logic-level DC/DC applications for low-power computer and fixed telecom systems
- P-Channel:
- Load, charger, and battery switching in portable systems
- P-Channel plus Schottky diode:
- Asynchronous DC/DC in applications such as hard disk drives and game consoles
- Charger switch
Standard Electrical Specifications
| Series | Configuration | Channel | VDS(V) | VGS(V) | Qgs(nC) | Qgd(nC) | ID Max.(A) | PD Max.(W) | VGS(th) min(V) | RgTyp. (Ohms) |
|---|---|---|---|---|---|---|---|---|---|---|
| Si5997DU | DUAL | P | -30 | 20 | 1.6 | 2.2 | 6 | 10.4 | 1.2 | 8 |
| Si5999EDU | DUAL | P | -20 | 12 | 1.6 | 1.8 | 6 | 10.4 | 0.6 | 8 |
| Si5906DU | DUAL | N | 30 | 20 | 1 | 1.1 | 6 | 10.4 | 1.2 | 1.8 |
| Si5944DU | DUAL | N | 40 | 20 | 1.2 | 0.8 | 2.5 | 10 | 1 | 2.7 |
| Si5980DU | DUAL | N | 100 | 20 | 1 | 0.4 | 6 | 7.8 | 2 | 2.4 |
| Si5517DU | N&P PAIR | P | -20 | 8 | 0.75 | 1.5 | 6 | 8.3 | 0.4 | 8 |
| Si5517DU | N&P PAIR | N | 20 | 8 | 0.91 | 0.7 | 12 | 8.3 | 0.4 | 1.9 |
| Si5419DU | SINGLE | P | -30 | 20 | 4.5 | 7.5 | 8 | 31 | 1.2 | 6.7 |
| Si5459DU | SINGLE | P | -20 | 12 | 2 | 3 | 12 | 10.9 | 0.6 | 6 |
| Si5486DU | SINGLE | N | 20 | 8 | 3.3 | 3.1 | 12 | 31 | 0.4 | 5 |
| Si5456DU | SINGLE | N | 20 | 20 | 3.2 | 3.2 | 12 | 31 | 1 | 1.1 |
| Si5458DU | SINGLE | N | 30 | 20 | 1.1 | 0.8 | 6 | 10.4 | 1.2 | 2.8 |
| Si5418DU | SINGLE | N | 30 | 20 | 4.5 | 2.7 | 12 | 31 | 1.2 | 3.5 |
| Si5410DU | SINGLE | N | 40 | 20 | 4.5 | 3.1 | 12 | 31 | 1.2 | 3.5 |
| Si5476DU | SINGLE | N | 60 | 20 | 3.5 | 4.2 | 12 | 31 | 1 | 3.3 |
