P-Channel 20-V (D-S) MOSFET

Part Number Information
Part #: Price/Availability:
Si7615DN Buy Now

The new Si7615DN offers an ultra-low on-resistance of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFET translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous p-channel power MOSFET on the market. The Si7615DN frees up designers from having to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this very low on-resistance range. Among competing 30-V devices, the lowest available p-channel on-resistance with the area of the PowerPAK 1212-8 is 14.4 mΩ and 27 mΩ at gate drives of 10 V and 4.5 V, respectively. The device is 100 % Rg-tested and halogen-free in accordance with IEC 61249-2-21.


  • Halogen-free According to IEC 61249-2-21 Definition 
  • TrenchFET® Gen III P-Channel Power MOSFET 
  • 100 % Rg Tested 
  • 100 % UIS Tested 
  • Compliant to RoHS Directive 2002/95/EC


  • Adaptor Switch for load switching applications
    • Notebook computers 
    • Netbooks 
    • Industrial/general systems
  • Battery Switch 
  • Load Switch