E-Series MOSFETs

Part Number Information
Part #: Price/Availability:
SiHP22N60E Buy Now
SiHF22N60E Buy Now
SiHG22N60E Buy Now
SiHB22N60E Buy Now
SiHP24N65E Buy Now
SiHG24N65E Buy Now
SiHB24N65E Buy Now
SiHP30N60E Buy Now
SiHF30N60E Buy Now
SiHF30N60E Buy Now
SiHB30N60E Buy Now
SiHG47N60E Buy Now
SiHG73N60E Buy Now

Featuring new Super Junction Technology, Vishay’s new E Series of 600 V and 650 V n-channel power MOSFETs achieve new levels of efficiency and power density, while offering lower input capacitance and increased switching speeds over a wide range of current ratings. The MOSFETs provide ultra-low maximum on-resistance from 64 mΩ to 190 mΩ at 10 V, which is 30 % lower than previous-generation S Series devices for the same die size. This low on-resistance translates into extremely low conduction losses to save energy in high-power, high-performance switch mode applications. Available in the TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages, the E Series offers ultra-low gate charge and low gate charge times on-resistance FOM for power conversion applications.


  • Ultra-low maximum on resistance from 64 mΩ to 190 mΩ at 10 V
  • Low gate charge and gate charge times on-resistance FOM
  • Wide range of current ratings from 22 A to 47 A
  • E Series Super Junction Technology
  • Offered in TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages
  • Withstand high energy pulse in the avalanche and commutation mode
  • Compliant to RoHS Directive 2002/95/EC
  • Avalanche (UIS) rated for reliable operation


  • Switch mode applications
    • Power factor correction
    • Server and telecom power systems
    • Welding
    • Plasma cutting
    • Battery chargers
    • High-intensity discharge (HID) lighting
    • Fluorescent ballast lighting
    • Semiconductor capital equipment
    • Solar inverters
    • Induction heating.