Gen. 5.0 Schottky Diode


Vishay's four new Gen 5.0 high performance 45-V and 100-V Schottky diodes are the industry's first such devices to extend the D-PAK current capability up to 20A. The devices are suitable as stand-alone packages for high-efficiency, high-density solutions, as well as offering a cost effective and compact replacement for the D2PAK package. Built on submicron trench technology, the 6CWT04FN, 10WT10FN, 20CWT10FN and 20WT04FN offer a maximum junction temperature of +175°C, extremely low forward voltage drop and low reverse leakage, allowing designers to increase power density in automotive, solar energy, and other high-temperature applications. Their high and stable breakdown voltage accommodates voltage spikes and optimizes power density, which is increased in the diodes by 25%. The devices feature 30% increased ruggedness for reverse avalanche capability, with parts 100% screened in avalanche, and negligible switching losses. All four devices are also available in I-PAK versions.


  • High and STABLE Breakdown voltage (typical BV is 120V providing room for voltage spikes)
  • RBSOA available – Allows tight and cost effective designs
  • Extremely low reverse leakage and STABLE along the device life
  • Optimized Vf vs IR trade off for high efficiency
  • Increased ruggedness for reverse avalanche capability
  • Use smaller device ( D-Pak / I-Pak ) to make smaller design with a better $/A ratio to save money
  • Use Submicron Trench technology
  • Vf: -20%; Leakage: -40%; Power density: +20%; Avalanche: +40%; 100V, 45V available


  • Automotive AEC Q101 (Tj max=175°C)
  • High efficiency SMPS 12-48V
  • High Density solutions with D-Pak up to 20A
  • Telecom
  • Solar applications (Low Vf, Low Rev. Leakage)