TrenchFET® Gen III MOSFET with TurboFET™

Part Number Information
Part #: Price/Availability:
SiS426DN Buy Now
Si7784DP Buy Now
SiR496DP Buy Now

TrenchFET Gen III with TurboFET technology perfectly complements TrenchFET Gen III for the high-side and low-side MOSFETs, respectively, of a synchronous buck converter. Charge balanced TrenchFET Gen III utilizing TurboFET drain structure technology provides record-breaking gate charge while maintaining excellent on-resistance performance, enabling lower switching losses and high efficiency.  


  • On-resistance times gate-drain charge FOM down to 23.2 mΩ-nC at VGS = 4.5 V.
  • Available in thermally advanced PowerPAK® 1212-8 and PowerPAK SO-8 packages.
  • Provides opportunity to operate DC to DC converters at higher frequencies and thus use smaller passive components.
  • 20-V and 30-V devices with FOM down to 76.6 mΩ-nC in 3.3-mm x 3.3-mm footprint.


  • Point of load (POL) systems
  • Voltage regulator modules (VRMs)
  • PCs and servers
  • DC to DC converters