1.2-V Rated MOSFETs

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Si8429DB Buy Now

To help minimize power consumption and increase battery life, many of the ASICs found in portable electronics systems are designed to operate at core supply voltages between 1.2 V and 1.3 V. Until now, the lack of power MOSFETs with guaranteed turn-on operation below 1.8 V has limited the options for designers who wanted to take advantage of these low core supply voltages. The use of level-shifting circuitry with 1.5-V or 1.8-V MOSFETs adds complexity while increasing power consumption. Even less desirable is using such MOSFETs in an unguaranteed region without level shifting, where on-resistance tends to increase exponentially and process tolerances can even lead to design malfunction. Vishay addresses these problems with breakthrough power MOSFETs that work directly from 1.2-V and 1.5-V core supply voltages with on-resistance as low as 41 milliohms. With their low threshold voltage and guaranteed specifications at a 1.2-V (or 1.5-V) gate drive, these devices eliminate the need for level-shifting circuitry and maximize the power-saving benefits of low operating voltages in battery-operated systems. Vishay's 1.2-V and 1.5-V MOSFET families include single n- and p-channel devices in packages as small as 1.6 mm x 1.6 mm (PowerPAK® SC-75) as well as in the chipscale MICRO FOOT® format.


  • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry
  • Low on-resistance and level shift elimination help reduce power consumption and increase battery usage time
  • Single n- and p-channel device options
  • Choice of on-resistance and package options with footprints as small as 1.6 mm by 1.6 mm (1.2 mm x 1 mm in the MICRO FOOT format).
  • Devices with ratings down to 1.5 V also available


  • Portable Devices
    • Load Switches
    • Power Amplifier Switches
    • Battery Chargers