To help minimize power consumption and increase battery life, many of the ASICs found in portable electronics systems are designed to operate at core supply voltages between 1.2 V and 1.3 V. Until now, the lack of power MOSFETs with guaranteed turn-on operation below 1.8 V has limited the options for designers who wanted to take advantage of these low core supply voltages. The use of level-shifting circuitry with 1.5-V or 1.8-V MOSFETs adds complexity while increasing power consumption. Even less desirable is using such MOSFETs in an unguaranteed region without level shifting, where on-resistance tends to increase exponentially and process tolerances can even lead to design malfunction. Vishay addresses these problems with breakthrough power MOSFETs that work directly from 1.2-V and 1.5-V core supply voltages with on-resistance as low as 41 milliohms. With their low threshold voltage and guaranteed specifications at a 1.2-V (or 1.5-V) gate drive, these devices eliminate the need for level-shifting circuitry and maximize the power-saving benefits of low operating voltages in battery-operated systems. Vishay's 1.2-V and 1.5-V MOSFET families include single n- and p-channel devices in packages as small as 1.6 mm x 1.6 mm (PowerPAK® SC-75) as well as in the chipscale MICRO FOOT® format.