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SiS892DN Buy Now
SiR826DP Buy Now
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SiR876ADP Buy Now
SiR870DP Buy Now
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SiR882ADP Buy Now
SiR878DP Buy Now
SiR846DP Buy Now
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Si4190DY Buy Now

ThunderFET 60 V to 100 V n-channel TrenchFET® power MOSFETs devices offer on-resistance ratings down to 4.5 V VGS in SO-8 and PowerPAK® SO-8 packages. Utilizing Vishay’s new ThunderFET® technology, devices offer the lowest values of on-resistance. In addition the product of on-resistance and gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — several devices are best in class. The ThunderFET power MOSFETs are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs’ 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered. By utilizing 5 V rated ICs, gate driver losses can be reduced and the overall design simplified by eliminating the need for a separate 12 V power rail.  


  • On-resistance ratings down to VGS = 4.5 V, include industry lowest FOM for 4.5 V rated devices
  • Can lower losses by enabling lower gate drive
  • Allows lower voltage, lower cost 5 V PWM ICs
  • Low FOM helps reduce switching losses
  • Thermally advanced PowerPAK® packaging:
    • PowerPAK SO-8 for higher current
  • PowerPAK 1212-8, 1⁄3 the size of an SO-8 footprint, for space savings


  • Industrial
  • Primary side switching in isolated DC/DC converters
  • Secondary synchronous rectification