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SIHD180N60E-GE3

SIHD180N60E-GE3 Vishay Semiconductors
Reference Only
MOSFET 650V Vds; 30V Vgs DPAK (TO-252)
Availability

Standard: 3,000 In Stock

Product Details

Datasheet

SIHD180N60E-GE3

RoHS/Lead

RoHS Compliant
Lead Free

Available Packaging

Standard

ECAD Model

3,000 In Stock
Additional Stock Lead Time: 25 Wks
Quantity
Price
Ext. Price
3,000
$1.35
$4,050.00
6,000
$1.29
$7,740.00
Please adjust quantity to Min / Mult value
Min: 3,000 / Mult: 3,000

Tech Specifications

DescriptionProduct AttributeSearch Similar
ManufacturerVishay
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance195 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge32 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation156 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time9 ns
Forward Transconductance - Min6.5 S
Product TypeMOSFET
Rise Time22 ns
SeriesE
SubcategoryMOSFETs
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time15 ns

Export and Environmental Classification

  • ECCNEAR99
  • HTS8541290095
  • TARIC8541290000
  • RoHS CompliantYes
    RoHS Compliant
  • RoHS Exemption NumberN/A
  • Lead(PB) in TerminalsNo
    Lead Free
  • REACH SVHCYes
  • REACH Substance NameLead (7439-92-1)

Documents

Datasheet

Datasheet

Technical Resources

Device Orientation for DPAK (TO-252) and Reverse DPAK (TO-252) (T1)
Device Orientation for TO-252 and Reverse TO-252 (T4)
DPAK (TO-252) (T1 Method)
DPAK Reel
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
Tape Drawing for DPAK (TO-252) (T4 Method)
TO-252AA (High Voltage)

EDA / CAD Models

EDA / CAD Help

My Notes

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