SIHD1K4N60E-GE3

SIHD1K4N60E-GE3 Vishay / Siliconix
Reference Only
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Availability

Standard: 9,000 In Stock

Product Details

  • Manufacturer: Vishay / Siliconix

  • TTI Part Number: SIHD1K4N60E-GE3

  • Mfr Part Number: SIHD1K4N60E-GE3

  • Product Category: MOSFET

RoHS/Lead

RoHS Compliant
Lead Free

Available Packaging

Standard

ECAD Model

9,000 In Stock
Additional Stock Lead Time: 16 Wks

Quantity
Price
Ext. Price

$0.44
$1,320.00
$0.428
$2,568.00
$0.419
$3,771.00
Please adjust quantity to Min / Mult value
Min: 3,000 / Mult: 3,000

Tech Specifications

DescriptionProduct AttributeSearch Similar
ManufacturerVishay
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current4.2 A
Rds On - Drain-Source Resistance1.45 Ohms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge7.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation63 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min0.8 S
Product TypeMOSFET
Rise Time23 ns
SeriesE
SubcategoryMOSFETs
Transistor Type1 N-Channel E-Series Power MOSFET
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

  • ECCNEAR99
  • HTS8541290095
  • TARIC8541290000
  • RoHS CompliantYes
    RoHS Compliant
  • RoHS Exemption NumberN/A
  • Lead(PB) in TerminalsNo
    Lead Free
  • REACH SVHCYes
  • REACH Substance NameLead (7439-92-1)

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